MM908E625ACDWB/R2 Motorola, MM908E625ACDWB/R2 Datasheet - Page 8

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MM908E625ACDWB/R2

Manufacturer Part Number
MM908E625ACDWB/R2
Description
Integrated Quad Half H-Bridge with Power Supply / Embedded MCU / and LIN Serial Communication
Manufacturer
Motorola
Datasheet
908E625
8
STATIC ELECTRICAL CHARACTERISTICS (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller chip.
Characteristics noted under conditions 9.0 V
the approximate parameter mean at T
LIN PHYSICAL LAYER
HIGH-SIDE OUTPUT (HS)
Output Low Level
Output High Level
Pullup Resistor to V
Leakage Current to GND
Leakage Current to GND (V
LIN Receiver
LIN Wake-Up Threshold
Switch ON Resistance @ T
High-Side Overcurrent Shutdown
TXD LOW, 500 Ω Pullup to V
TXD HIGH, I
Recessive State (-0.5 V < V
Including Internal Pullup Resistor, V
Including Internal Pullup Resistor, V
Recessive
Dominant
Threshold
Input Hysteresis
OUT
SUP
= 1.0 µA
J
SUP
= 25
Characteristic
LIN
SUP
Disconnected)
°
C with I
< V
SUP
LIN
LIN
A
)
LOAD
@ -18 V
@ +18 V
Freescale Semiconductor, Inc.
= 25°C under nominal conditions unless otherwise noted.
For More Information On This Product,
= 1.0 A
V
SUP
Go to: www.freescale.com
16 V, -40°C
T
J
125°C unless otherwise noted. Typical values noted reflect
I
I
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
BUS_NO_GND
BUS_PAS_
R
V
V
Symbol
R
DS(ON)HS
LIN-HIGH
LIN-LOW
I
V
V
V
HSOC
SLAVE
I
BUS
V
V
WTH
ITH
IHY
IH
IL
rec
0.01 V
V
0.6 V
SUP
Min
3.9
20
0
0
-1.0
LIN
SUP
V
V
-600
SUP
SUP
Typ
600
30
25
/2
/2
0.1 V
0.4 V
V
Max
700
1.4
7.0
60
20
SUP
SUP
LIN
Unit
mΩ
kΩ
µA
µA
V
V
V
V
A

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