S29PL-N_07 SPANSION [SPANSION], S29PL-N_07 Datasheet - Page 30

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S29PL-N_07

Manufacturer Part Number
S29PL-N_07
Description
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
Manufacturer
SPANSION [SPANSION]
Datasheet
30
7.4.3
Sector Erase
The sector erase function erases one or more sectors in the memory array. (See
Figure 7.3 on page
Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of no less than t
out period, additional sector addresses and sector erase commands can be written. Loading the sector erase
buffer can be done in any sequence, and the number of sectors can be from one sector to all sectors. The
time between these additional cycles must be less than t
following the exceeded time-out (t
or Erase Suspend during the time-out period resets that bank to the read mode. The system can monitor DQ3
to determine if the sector erase timer has timed out (see
on page
When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data
from the non-erasing banks. The system can determine the status of the erase operation by reading DQ7 or
DQ6/DQ2 in the erasing bank. See
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs,
the sector erase command sequence should be reinitiated once that bank has returned to reading array data,
to ensure data integrity.
Figure 7.3 on page 31
the Erase/Program Operations parameters and timing diagrams.
Software Functions and Sample Code
Note
Unlimited additional sectors can be selected for erase; command(s) must be written within t
The following is a C source code example of using the sector erase function. Refer to the Spansion Low Level
Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory
software development guidelines.
Cycle
/* Example: Sector Erase Command */
*((UINT16 *)base_addr + 0x555) = 0x00AA;
*((UINT16 *)base_addr + 0x2AA) = 0x0055;
*((UINT16 *)base_addr + 0x555) = 0x0080;
*((UINT16 *)base_addr + 0x555) = 0x00AA;
*((UINT16 *)base_addr + 0x2AA) = 0x0055;
*((UINT16 *)sector_address)
1
2
3
4
5
6
40). The time-out begins from the rising edge of the final WE# pulse in the command sequence.
Sector Erase Command
31.) The device does not require the system to preprogram prior to erase. The Embedded
Setup Command
Description
illustrates the algorithm for the erase operation. See
Unlock
Unlock
Unlock
Unlock
S29PL-N MirrorBit
D a t a
SEA
Write Operation Status on page 37
) may or may not be accepted. Any command other than Sector Erase
(LLD Function = lld_SectorEraseCmd)
= 0x0030;
S h e e t
Table 7.9 Sector Erase
Flash Family
Operation
Write
Write
Write
Write
Write
Write
( P r e l i m i n a r y )
/* write unlock cycle 1
/* write unlock cycle 2
/* write setup command
/* write additional unlock cycle 1 */
/* write additional unlock cycle 2 */
/* write sector erase command
SEA
DQ3: Sector Erase Timeout State Indicator
. Any sector erase address and command
SEA
for information on these status bits.
Sector Address
Word Address
Base + 2AAh
Base + 2AAh
Base + 555h
Base + 555h
Base + 555h
.
AC Characteristics on page 59
S29PL-N_00_A5 June 6, 2007
SEA
Table 12.1 on page
occurs. During the time-
*/
*/
*/
*/
00AAh
00AAh
0055h
0080h
0055h
0030h
Data
66, and
for

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