S29PL-N_07 SPANSION [SPANSION], S29PL-N_07 Datasheet - Page 65

• Manufacturer Part Number: S29PL-N_07
• Description: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
• Manufacturer: SPANSION [SPANSION]

June 6, 2007 S29PL-N_00_A5
11.8.5
11.8.6
Erase and Programming Performance
BGA Ball Capacitance
Notes
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. Contact the local sales office for minimum cycling endurance values in specific applications and operating conditions.
7. See Application Note
8. Word programming specification is based upon a single word programming operation not utilizing the write buffer.
Notes
1. Sampled, not 100% tested.
2. Test conditions T
Sector Erase Time
Chip Erase Time
Word Programming Time
Effective Word Programming Time
utilizing Program Write Buffer
Total 32-Word Buffer
Programming Time
Chip Programming Time
using 32-Word Buffer (3)
Erase Suspend/Erase Resume
Program Suspend/Program Resume
assume checkerboard pattern. All values are subject to change.
than the maximum program times listed.
on page 66
Parameter
C
C
C
OUT
IN2
IN
and
D a t a
Parameter
(Notes)
Table 12.2 on page 68
A
= 25°C, f = 1.0 MHz.
Erase Suspend/Resume Timing
128 Kword
32 Kword
S h e e t
S29PL-N MirrorBit
Control Pin Capacitance
Parameter Description
CC
Output Capacitance
for further information on command definitions.
Input Capacitance
( P r e l i m i n a r y )
Condition
= 2.7 V, 100,000 cycles. All values are subject to change.
Device
ACC
ACC
ACC
ACC
ACC
ACC
ACC
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
for more details.
157.3 (PL256N)
78.6 (PL127N)
78.6 (PL129N)
202 (PL256N)
100 (PL127N)
130 (PL256N)
100 (PL256N)
100(PL129N)
65 (PL127N)
65 (PL129N)
50 (PL127N)
50 (PL129N)
™
(Note 1)
Flash Family
Typ
300
192
1.6
1.6
0.3
0.3
9.4
40
24
6
900 (PL256N)
450 (PL127N)
450 (PL129N)
512 (PL256N)
256 (PL127N)
256 (PL129N)
315 (PL256N)
158 (PL127N)
158 (PL129N)
200 (PL256N)
100 (PL127N)
100 (PL129N)
(Note 2)
3000
1920
Max
CC
400
240
<20
<20
94
60
7
7
4
4
, 10,000 cycles. Additionally, programming typicals
Test Setup
V
V
V
OUT
IN
IN
= 0
= 0
= 0
Unit
µs
µs
µs
µs
µs
s
s
s
Excludes 00h programming
prior to erasure (4)
Excludes system level overhead (5)
Excludes system level overhead (5)
Typ
7
8
8
Comments
(Notes)
Max
10
12
11
Table 12.1
Unit
pF
pF
pF
65