S29PL-N_07 SPANSION [SPANSION], S29PL-N_07 Datasheet - Page 31

• Manufacturer Part Number: S29PL-N_07
• Description: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
• Manufacturer: SPANSION [SPANSION]

June 6, 2007 S29PL-N_00_A5
Notes
1. See
2. See the section on DQ3 for information on the sector erase timeout.
No
Table 12.1 on page 66
PASS. Device returns
to reading array.
Yes
Poll DQ3.
DQ3 = 1?
D a t a
Yes
No
S h e e t
Write Sector Erase Cycles:
Sector Address, Data 30h
Address 555h, Data AAh
Address 555h, Data 80h
Address 2AAh, Data 55h
Perform Write Operation
for erase command sequence.
Sector Addresses
Write Additional
Status Algorithm
Wait 4 μs
Additional
DQ5 = 1?
Sectors?
S29PL-N MirrorBit
Done?
Yes
Select
Yes
No
Yes
( P r e l i m i n a r y )
Figure 7.3 Sector Erase Operation
FAIL. Write reset command
Last Sector
to return to reading array.
Selected?
No
No
™
Flash Family
• Each additional cycle must be written within t
• Timeout resets after each additional cycle is written
• The host system may monitor DQ3 or wait t
• No limit on number of sectors
• Commands other than Erase Suspend or selecting additional
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Error condition (Exceeded Timing Limits)
acceptance of erase commands
sectors for erasure during timeout reset device to reading array
data
SEA
SEA
to ensure
timeout
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