CY7C1363C CYPRESS [Cypress Semiconductor], CY7C1363C Datasheet - Page 20

• Manufacturer Part Number: CY7C1363C
• Description: 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Document #: 38-05541 Rev. *A
AC Test Loads and Waveforms
Thermal Resistance
Capacitance
Switching Characteristics
C
C
C
t
Clock
t
t
t
Output Times
t
t
t
t
t
t
Note:
15. Tested initially and after any design or process change that may affect these parameters.
POWER
CYC
CH
CL
CDV
DOH
CLZ
CHZ
OEV
OELZ
Parameter
IN
CLK
I/O
OUTPUT
OUTPUT
Parameter
Parameter
3.3V I/O Test Load
2.5V I/O Test Load
Θ
Θ
JA
JC
Z
Z
[15]
0
0
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
= 50Ω
= 50Ω
Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
V
Clock Cycle Time
Clock HIGH
Clock LOW
Data Output Valid After CLK Rise
Data Output Hold After CLK Rise
Clock to Low-Z
Clock to High-Z
OE LOW to Output Valid
OE LOW to Output Low-Z
DD
(Typical) to the first Access
Description
(a)
(a)
V
V
[15]
T
Description
T
= 1.25V
= 1.5V
R
R
L
L
Description
[17, 18, 19]
= 50Ω
= 50Ω
Over the Operating Range
[17, 18, 19]
OUTPUT
OUTPUT
3.3V
2.5V
INCLUDING
Test conditions follow standard
test methods and procedures
for measuring thermal
impedance, per EIA/JESD51
INCLUDING
JIG AND
[17, 18, 19]
SCOPE
JIG AND
T
V
V
SCOPE
A
PRELIMINARY
DD
DDQ
[16]
Test Conditions
5 pF
5 pF
= 25°C, f = 1 MHz,
= 3.3V
Test Conditions
= 2.5V
(b)
(b)
R = 317Ω
R = 1667Ω
[20, 21]
Min.
7.5
3.0
3.0
2.0
1
0
0
133 MHz
R = 351Ω
R =1538Ω
Max.
6.5
3.5
3.5
V
Package
Package
GND
GND
V
DDQ
TQFP
DDQ
TQFP
25
Min.
9
≤ 1ns
≤ 1ns
5
5
5
8.5
3.2
3.2
2.0
1
0
0
117 MHz
10%
10%
Max.
Package
7.5
3.5
3.5
Package
ALL INPUT PULSES
ALL INPUT PULSES
BGA
BGA
5
5
7
25
6
90%
90%
Min.
4.0
4.0
2.0
10
(c)
(c)
1
0
0
100 MHz
Package
Package
CY7C1361C
CY7C1363C
fBGA
fBGA
5
5
7
27
6
Max.
8.5
3.5
3.5
Page 20 of 30
90%
90%
10%
10%
≤ 1ns
≤ 1ns
Unit
°C/W
°C/W
Unit
Unit
pF
pF
pF
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns