CY8C32_12 CYPRESS [Cypress Semiconductor], CY8C32_12 Datasheet - Page 96

• Manufacturer Part Number: CY8C32_12
• Manufacturer: CYPRESS [Cypress Semiconductor]

Table 11-47. EEPROM AC Specifications
11.7.3 Nonvolatile Latches (NVL))
Table 11-48. NVL DC Specifications
Table 11-49. NVL AC Specifications
11.7.4 SRAM
Table 11-50. SRAM DC Specifications
Table 11-51. SRAM AC Specifications
Document Number: 001-56955 Rev. *N
T
V
F
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
SRAM
SRAM
Single row erase/write cycle time
EEPROM data retention time, retention
period measured from last erase cycle
Erase and program voltage
NVL endurance
NVL data retention time
SRAM retention voltage
SRAM operating frequency
Description
Description
Description
Description
Description
Average ambient temp, T
1M erase/program cycles
Average ambient temp, T
100 K erase/program cycles
Average ambient temp.
T
cycles
V
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Programmed at 25 °C
Programmed at 0 °C to 70 °C
A
DDD
 85 °C, 10 K erase/program
pin
Conditions
Conditions
Conditions
Conditions
Conditions
A
A
 25 °C,
 55 °C,
PSoC
1.71
Min
Min
Min
Min
Min
100
DC
1.2
1K
20
20
10
20
20
–
®
3: CY8C32 Family
Typ
Typ
Typ
Typ
Typ
–
2
–
–
–
–
–
–
–
–
–
Data Sheet
50.01
Max
Max
Max
Max
Max
5.5
20
–
–
–
–
–
–
–
–
Page 96 of 122
program/
program/
cycles
cycles
Units
years
Units
Units
erase
erase
years
years
Units
Units
MHz
ms
V
V