CY8C5246LTI-029 CYPRESS [Cypress Semiconductor], CY8C5246LTI-029 Datasheet - Page 80

• Manufacturer Part Number: CY8C5246LTI-029
• Manufacturer: CYPRESS [Cypress Semiconductor]

11.4 Memory
Specifications are valid for –40 °C ≤ T
except where noted.
11.4.1 Flash
Table 11-43. Flash DC Specifications
Table 11-44. Flash AC Specifications
11.4.2 EEPROM
Table 11-45. EEPROM DC Specifications
Document Number: 001-66236 Rev. **
T
T
T
Parameter
Parameter
Parameter
WRITE
ERASE
BULK
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (256 KB)
Sector erase time (16 KB)
Total device program time
(including JTAG or SWD and other
overhead)
Flash data retention time, retention
period measured from last erase cycle
Erase and program voltage
Erase and program voltage
Description
Description
Description
A
≤ 85 °C and T
Figure 11-45. Clock to Output Performance
PRELIMINARY
V
J
Average ambient temp.
T
cycles
–40 °C ≤ T
erase/program cycles
DDD
A
≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
≤ 55 °C, 100 K erase/program
pin
A
Conditions
Conditions
Conditions
≤ 85 °C, 10 K
PSoC
®
5: CY8C52 Family Datasheet
1.71
Min
1.71
Min
Min
20
10
–
–
–
–
–
–
Typ
Typ
Typ
15
10
–
5
–
–
–
–
–
–
Max
Max
Max
5.5
320
5.5
20
13
15
20
7
–
–
Page 80 of 94
Seconds
Units
Units
Years
Units
ms
ms
ms
ms
ms
V
V
[+] Feedback
[+] Feedback
[+] Feedback