HYB18L256169BF QIMONDA [Qimonda AG], HYB18L256169BF Datasheet - Page 40

• Manufacturer Part Number: HYB18L256169BF
• Description: 256-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

3
3.1
Table 17
Parameter
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
Table 18
Parameter
Input capacitance: CLK
Input capacitance: all other input pins
Input/Output capacitance: DQ
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 with VDD, VDDQ applied and all other pins (except the pin under test)
Data Sheet
floating. DQ’s should be in high impedance state. This may be achieved by pulling CKE to low level.
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Electrical Characteristics
Operating Conditions
Absolute Maximum Ratings
Pin Capacitances
1)2)
Commercial
Extended
40
Symbol
Symbol
V
V
T
I
V
C
V
C
C
P
T
OUT
DDQ
OUT
STG
DD
IN
C
IO
D
I1
I2
min.
min.
-0.3
-0.3
-0.3
-0.3
-25
-55
1.5
1.5
3.0
0
–
–
Values
Values
HY[B/E]18L256169BF-7.5
V
V
DDQ
DDQ
256-Mbit Mobile-RAM
Electrical Characteristics
max.
+150
max.
+ 70
+85
2.7
2.7
0.7
3.0
3.0
5.0
50
02032006-MP0M-7FQG
+ 0.3
+ 0.3
Rev. 1.02, 2006-12
Unit
Unit
mA
°C
°C
°C
pF
pF
pF
W
V
V
V
V