HYB18L256169BF QIMONDA [Qimonda AG], HYB18L256169BF Datasheet - Page 41

• Manufacturer Part Number: HYB18L256169BF
• Description: 256-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

Table 19
Parameter
Power Supply Voltage
Power Supply Voltage for DQ Output Buffer
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current
Output leakage current
1) 0 °C ≤
2)
Data Sheet
potential.
V
Pulse width measured at 50% with amplitude measured between peak voltage and DC reference level.
IH
may overshoot to
T
C
≤ 70 °C (comm.); -25 °C ≤
Electrical Characteristics
I
OL
I
OH
V
= 0.1 mA)
DD
= -0.1 mA)
+ 0.8 V for pulse width < 4 ns;
T
C
≤ 85 °C (extended); all voltages referenced to
1)
V
41
Symbol
IL
V
V
V
may undershoot to -0.8 V for pulse width < 4 ns.
V
V
I
V
I
DDQ
OL
DD
OH
OL
IL
IH
IL
0.8 ×
V
DDQ
min.
1.70
1.70
-0.3
-1.0
-1.5
–
V
- 0.2
DDQ
Values
V
HY[B/E]18L256169BF-7.5
SS
.
V
V
DDQ
256-Mbit Mobile-RAM
SS
Electrical Characteristics
max.
1.95
1.95
0.3
0.2
1.0
1.5
and
–
02032006-MP0M-7FQG
+ 0.3
V
SSQ
Rev. 1.02, 2006-12
must be at same
Unit
µA
µA
V
V
V
V
V
V
Notes
–
–
2)
2)
–
–
–
–