BH616UV1611BI55 BSI [Brilliance Semiconductor], BH616UV1611BI55 Datasheet - Page 12

• Manufacturer Part Number: BH616UV1611BI55
• Description: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
• Manufacturer: BSI [Brilliance Semiconductor]

n Revision History
R0201-BH616UV1611
Revision No.
1.0
1.1
1.2
1.3
History
Initial Production Version
Change I-grade operation temperature range
- from –25
Add Part Number for 70ns
Add DICE form and 48 TSOP-I package type
Change BGA package dimension for single chip solution
- form 6x8 mm to 8x10mm
Improve Spec.
- I
- I
- I
- t
- t
- t
- t
CC(MAX.)
CCsb1(TYP.)
CCDR(TYP.)
OE(MIN.)
AW(MIN.)
CW(MIN.)
BW(MIN.)
O
C to –40
from 12mA to 10mA for V
from 5.0uA to 4.0uA for V
from 2.5uA to 1.5uA for V
from 30ns to 25ns
from 45ns to 40ns
from 45ns to 40ns
from 45ns to 40ns
O
C
12
CC
CC
CC
=3.6V
=1.8V
=1.2V
Draft Date
May 10,2006
May 25, 2006
July 21, 2006
Otc 22, 2006
BH616UV1611
Revision
Otc.
Remark
Initial
2006
1.3