BH616UV1611BI55 BSI [Brilliance Semiconductor], BH616UV1611BI55 Datasheet - Page 8

• Manufacturer Part Number: BH616UV1611BI55
• Description: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
• Manufacturer: BSI [Brilliance Semiconductor]

n AC ELECTRICAL CHARACTERISTICS (T
n SWITCHING WAVEFORMS (WRITE CYCLE)
R0201-BH616UV1611
WRITE CYCLE
WRITE CYCLE 1
PARAMETER
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
t
WLWH
WHAX
E2LAX
DVWH
WHDX
WHQX
AVWL
AVWH
ELWH
BLWH
WLQZ
GHQZ
AVAX
ADDRESS
OE
CE1
CE2
LB, UB
WE
D
D
OUT
IN
PARANETER
NAME
t
t
t
t
t
t
t
t
t
t
t
(1)
t
t
WR1
WR2
WHZ
OHZ
WC
CW
BW
DW
OW
AW
WP
DH
AS
Write Cycle Time
Address Set up Time
Address Valid to End of Write
Chip Select to End of Write
Data Byte Control to End of Write
Write Pulse Width
Write Recovery Time
Write Recovery Time
Write to Output High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
DESCRIPTION
t
t
AS
OHZ
A
= -40
(4,10)
O
C to +85
(5)
(5)
8
(CE1, WE)
(LB, UB)
t
AW
(CE2)
O
C)
t
t
t
CW
CW
WP
t
t
WC
BW
(11)
(11)
(2)
CYCLE TIME : 55ns
MIN.
55
40
40
40
30
25
--
--
0
0
0
0
5
TYP.
t
--
--
--
--
--
--
--
--
--
--
--
--
--
DW
MAX.
20
25
--
--
--
--
--
--
--
--
--
--
--
t
t
WR1
WR2
t
DH
BH616UV1611
CYCLE TIME : 70ns
MIN.
(3)
(3)
70
60
60
60
35
30
--
--
0
0
0
0
5
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
Revision
Otc.
30
30
--
--
--
--
--
--
--
--
--
--
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2006
1.3