BH616UV1611BI55 BSI [Brilliance Semiconductor], BH616UV1611BI55 Datasheet - Page 2

• Manufacturer Part Number: BH616UV1611BI55
• Description: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
• Manufacturer: BSI [Brilliance Semiconductor]

n PIN DESCRIPTIONS
R0201-BH616UV1611
A0 to A19 Address Input (word mode)
A0 to A20 Address Input (byte mode)
(TSOP only)
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
OE Output Enable Input
LB and UB Data Byte Control Input
BYTE Byte Enable Input (TSOP only)
DQ0-DQ15 Data Input/Output
Ports
V
V
CC
SS
Name
These 20 address inputs select one of the 1,024K x 16 bit in the RAM, if BYTE is HIGH
These 21 address inputs select one of the 2,048K x 8 bit in the RAM, If BYTE is LOW
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
Lower byte and upper byte data input/output control pins.
This input selects the organization of the SRAM. 1,024K x 16-bit configuration is
selected if BYTE is HIGH. 2,048K x 8-bit configuration is selected if BYTE is LOW
16 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
2
Function
BH616UV1611
Revision
Otc.
2006
1.3