S9S08AW16A FREESCALE [Freescale Semiconductor, Inc], S9S08AW16A Datasheet - Page 316

• Manufacturer Part Number: S9S08AW16A
• Description: HCS08 Microcontrollers
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Appendix A Electrical Characteristics and Timing Specifications
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
A.13 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
316
1
2
3
4
5
Num
Typical values are based on characterization data at V
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information
on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Typical
Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
10
1
2
4
6
8
3
5
7
9
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to + 125°C
Characteristic
5
3
(2)
MC9S08AC16 Series Data Sheet, Rev. 8
Table A-15. FLASH Characteristics
2
4
(2)
(2)
DD
V
= 5.0 V, 25°C unless otherwise stated.
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
Chapter 4,
15
—
5
20,000
4000
100,000
Typ
9
4
100
—
“Memory.”
1
Freescale Semiconductor
Max
6.67
200
5.5
5.5
—
—
—
cycles
DD
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
supply.