AT89C51ED2-SMSIM ATMEL Corporation, AT89C51ED2-SMSIM Datasheet - Page 12

• Manufacturer Part Number: AT89C51ED2-SMSIM
• Description: 8-bit Flash Microcontroller
• Manufacturer: ATMEL Corporation

4.3.3 Time Dependent Dielectric Breakdown
Purpose:
To evaluate the AT56800 thin gate oxide TDDB performance as follows:
Test Parameters:
Lot
Min thickness:
Max thickness:
Capacitor size:
The stress conditions used are shown below:
Temperature/Field
225C
200C
175C
Accumulated total stress time: 132 hours / 46 capacitors
Calculation Parameters:
Failure Criteria:
Temp/Voltage use:
Oxide thickness:
Lifetime Prediction:
The equation used to describe the breakdown of gate oxides is:
Tbd(i) = exp(SIGMA*Z(i) + GAMMA*Eox +Ea/kT + T0)
Where
Tbd(i) is the time to breakdown of the i
SIGMA is the lognormal standard deviation of the breakdown distribution,
Z(i) is the Z-score of the i
measured in standard deviations),
GAMMA is the Field acceleration constant,
Eox is the oxide field,
Ea is the activation energy of this failure mechanism,
K is Boltzmann’s constant,
T is the Kelvin Temperature, and
T0 is a fitting constant.
12
a) To determine the activation energy of gate oxide failures on STI active edge capacitors
b) To determine the field acceleration factor for intrinsic gate oxide failures
c) To determine the sigma the lognormal standard deviation of the time to breakdown distribution of the
intrinsic gate oxide
9G3470 (wafers 4, 5, 18)
72.9A
74.7A
6.267 um
0.01% failures
105°C / 3.3V
63A (target –10%)
9.5MV/cm
N=5
N=5
N=5
th
capacitor (essentially the difference between its breakdown time and the mean
2
th
capacitor,
10.0MV/cm
N=5
N=5
N=5
AT89C51RD2 / AT89C51ED2 QualPack
10.5MV/cm
N=5
N=5
N=6
Rev. 0 – 2003 July