S71PL032J SPANSION [SPANSION], S71PL032J Datasheet - Page 108

• Manufacturer Part Number: S71PL032J
• Description: STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
• Manufacturer: SPANSION [SPANSION]

pSRAM Type 3
16 Megabit (1M x 16) CMOS Pseudo SRAM
Features
Description
Pin Description
108
pSRAM Type 3 currently includes only a 16M bit device, organized as 1M words
by 16 bits. It is designed with advanced CMOS technology specified RAM featur-
ing low-power static RAM-compatible function and pin configuration. This device
operates from a single power supply. Advanced circuit technology provides both
high speed and low power. It is automatically placed in low-power mode when
CS1# or both UB# and LB# are asserted high or CS2 is asserted low. There are
three control inputs. CS1# and CS2 are used to select the device, and output en-
able (OE#) provides fast memory access. Data byte control pins (LB#,UB#)
provide lower and upper byte access. This device is well suited to various micro-
processor system applications where high speed, low power and battery backup
are required.
A0 – A19
DQ0 – DQ15
CE1#
CE2
OE#
WE#
LB#
UB#
VCC
VSS
Organized as 1M words by 16 bits
Fast Cycle Time: 70 ns
Standby Current: 100 µA
Deep power-down Current: 10 µA (Memory cell data invalid)
Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)
Compatible with low-power SRAM
Single Power Supply Voltage: 3.0V±0.3V
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A d v a n c e
Address Inputs
Data Inputs/Outputs
Chip Enable
Deep Power Down
Output Enable
Write Control
Lower Byte Control
Upper Byte Control
Power Supply
Ground
pSRAM Type 3
I n f o r m a t i o n
pSRAM_Type03_06A0 February 25, 2004