IC42S16100-5T ICSI [Integrated Circuit Solution Inc], IC42S16100-5T Datasheet - Page 29
IC42S16100-5T
Manufacturer Part Number
IC42S16100-5T
Description
512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Manufacturer
ICSI [Integrated Circuit Solution Inc]
Datasheet
1.IC42S16100-5T.pdf
(78 pages)
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IC42S16100
Integrated Circuit Solution Inc.
DR024-0D 06/25/2004
Interval Between Read and Write Commands
A read command can be interrupted and a new write
command executed while the read cycle is in progress, i.
e., before that cycle completes. Data corresponding to the
new write command can be input at the point new write
command is executed. To prevent collision between input
and output data at the I/On pins during this operation, the
CAS latency = 2, 3, burst length = 4
COMMAND
U/LDQM
CLK
I/O
READ (CA=A, BANK 0)
READ A0
HI-Z
D
WRITE B0
IN
t
CCD
B0
WRITE (CA=B, BANK 0)
D
IN
B1
D
IN
B2
output data must be masked using the U/LDQM pins. The
interval (t
one clock cycle.
The selected bank must be set to the active state before
executing this command.
D
IN
CCD
B3
) between these commands must be at least
29
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