IC42S16100-5T ICSI [Integrated Circuit Solution Inc], IC42S16100-5T Datasheet - Page 8

no-image

IC42S16100-5T

Manufacturer Part Number
IC42S16100-5T
Description
512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Manufacturer
ICSI [Integrated Circuit Solution Inc]
Datasheet
IC42S16100
AC TEST CONDITIONS
8
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
Input
Output Load
Symbol Parameter
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CAC
RAC
RAS
RP
DPL
DAL
RBD
WBD
RQL
WDL
PQL
QMD
DMD
MCD
RCD
RC
RRD
CCD
Clock Cycle Time
Operating Frequency
CAS Latency
Active Command To Read/Write Command Delay Time
RAS Latency (t
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Command Period (ACT[0] to ACT [1])
Column Command Delay Time
(READ, READA, WRIT, WRITA)
Input Data To Precharge Command Delay Time
Input Data To Active/Refresh Command Delay Time
(During Auto-Precharge)
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
Burst Stop Command To Input in Invalid Delay Time
(Write)
Precharge Command To Output in HIGH-Z Delay Time
(Read)
Precharge Command To Input in Invalid Delay Time
(Write)
Last Output To Auto-Precharge Start Time (Read)
DQM To Output Delay Time (Read)
DQM To Input Delay Time (Write)
Mode Register Set To Command Delay Time
OUTPUT
RCD
INPUT
CLK
I/O
+ t
(Input/Output Reference Level: 1.4V)
CAC
2.4V
1.4V
0.4V
2.4V
1.4V
0.4V
)
Z
O
= 50
t
OH
t
CS
1.4V
t
CH
t
30 pF
CHI
t
AC
50
t
CK
t
CL
1.4V
+1.4V
200
10
–2
-5
5
3
3
6
6
3
2
1
2
5
3
0
3
0
2
0
2
166
10
–2
-6
6
3
3
6
6
3
2
1
2
5
3
0
3
0
2
0
2
Integrated Circuit Solution Inc.
143
10
–2
-7
7
3
3
6
6
3
2
1
2
5
3
0
3
0
2
0
2
Units
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
DR024-0D 06/25/2004

Related parts for IC42S16100-5T