IC42S16100-5T ICSI [Integrated Circuit Solution Inc], IC42S16100-5T Datasheet - Page 5
![no-image](/images/no-image-200.jpg)
IC42S16100-5T
Manufacturer Part Number
IC42S16100-5T
Description
512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Manufacturer
ICSI [Integrated Circuit Solution Inc]
Datasheet
1.IC42S16100-5T.pdf
(78 pages)
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CAPACITANCE CHARACTERISTICS
IC42S16100
DC RECOMMENDED OPERATING CONDITIONS
Integrated Circuit Solution Inc.
DR024-0D 06/25/2004
ABSOLUTE MAXIMUM RATINGS
V
Symbol
C
C
CI/O
Symbol
V
V
V
V
P
I
T
T
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
2. All voltages are referenced to GND.
3. V
4. V
CS
Symbol
CC
IN
IN
OPR
STG
CC MAX
CCQ MAX
IN
OUT
D MAX
1
2
, V
V
V
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
IH
IH
IL
IL
CC
(min) = GND – 2.0V with a pulse < 3 ns and -1.5V with a pulse < 5ns.
(max) = V
Q
Parameter
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: I/O0-I/O15
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
CCQ
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
+ 2.0V with a pulse width
(4)
(3)
(1)
(1,2)
Min.
-0.3
3.0
2.0
3 ns.
(At T
A
= 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)
Typ.
3.3
—
—
(2)
(
V
At T
DD
Max.
+0.8
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–55 to +150
3.6
+ 0.3
A
0 to +70
Rating
= 0 to +70°C)
50
1
Unit
V
V
V
Unit
mA
°C
°C
Typ.
W
V
V
V
V
—
—
—
Max.
4
4
5
Unit
pF
pF
pF
5
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