IC42S16100-5T ICSI [Integrated Circuit Solution Inc], IC42S16100-5T Datasheet - Page 6

• Manufacturer Part Number: IC42S16100-5T
• Description: 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
• Manufacturer: ICSI [Integrated Circuit Solution Inc]

IC42S16100
DC ELECTRICAL CHARACTERISTICS
6
Symbol Parameter
I
I
V
V
I
I
I
I
I
I
IL
OL
CC
CC
CC
CC
CC
CC
OH
OL
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
2. Icc1 and Icc4 depend on the output load.
2
3
1
4
5
6
increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vcc and GND for each
memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
Precharge Standby Current
(In Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Operating Current
(In Burst Mode)
Auto-Refresh Current
Self-Refresh Current
(1)
(1,2)
Test Condition
0V
the tested pin at 0V
Output is disabled
0V
I
I
One Bank Operation,
Burst Length=1
t
I
CKE
CKE
t
I
t
CKE
RC
OUT
OUT
OUT
CK
OUT
RC
= t
= t
= –2 mA
= +2 mA
= 0mA
= 0mA
V
t
V
RC
CK
RC
IN
OUT
V
0.2V
V
(Recommended Operation Conditions unless otherwise noted.)
IH
(min.)
IL
(
(
MIN
MIN
V
(
(
MIN
CC
MAX
)
)
V
)
, with pins other than
CC
)
CAS latency = 3
t
t
CK
CK
= t
= t
CK
CK
(
(
MIN
MIN
)
)
Integrated Circuit Solution Inc.
Speed Min.
—
—
—
—
—
-5
-6
-7
-5
-6
-7
-5
-6
-7
–10
—5
—6
—7
2.4
–5
—
—
—
—
—
—
—
—
—
—
—
—
DR024-0D 06/25/2004
Max.
150
145
140
150
140
130
100
0.4
10
50
45
40
90
80
—
5
2
1
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
V
V