MT54W1MH36B-4 MICRON [Micron Technology], MT54W1MH36B-4 Datasheet - Page 14

• Manufacturer Part Number: MT54W1MH36B-4
• Manufacturer: MICRON [Micron Technology]

I
0ºC £ T
CAPACITANCE
THERMAL RESISTANCE
NOTE:
36Mb: 1.8V V
MT54W2MH18B_A.fm - Rev 9/02
1. I
2. Typical values are measured at V
3. Operating supply currents and burst mode currents are measured at 100 percent bus utilization.
4. NOP currents are valid when entering NOP after all pending READ and WRITE cycles are completed.
5. Average I/O current and power is provided for information purposes only and is not tested. Calculation assumes that all outputs are
6. This parameter is sampled.
7. Average thermal resistance between the die and the case top surface per MIL SPEC 883 Method 1012.1.
8. Junction temperature is a function of total device power dissipation and device mounting environment. Measured per SEMI G38-
DESCRIPTION
DESCRIPTION
DESCRIPTION
Operating Supply
Current: DDR
Standby Supply
Current: NOP
Stop Clock Current
Output Supply
Current: DDR
(Information only)
Address/Control Input
Capacitance
Output Capacitance (Q)
Clock Capacitance
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Balls (Bottom)
DD
loaded with C
V
P = 0.5 × n x f x V
87.
DD
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
is specified with no output current. I
Q = 1.5V and uses the equations: Average I/O Power as dissipated by the SRAM is:
A
DD
£ +70ºC;
, HSTL, QDRIIb2 SRAM
L
(in farads), f = input clock frequency, half of outputs toggle at each transition (for example, n = 18 for x36), C
V
DD
DD
Q
2
= MAX unless otherwise noted
x (C
Cycle time = 0; Input Static
Cycle time
All inputs £ V
All addresses/data static
L
t
+ 2C
KHKH =
Device in NOP state;
Outputs open
CONDITIONS
DD
O
). Average I
C
= 1.8V, V
L
Soldered on a 4.25 x 1.125 inch, 4-layer
³
t
= 15pF
KHKH (MIN);
t
DD
KHKH (MIN);
T
IL
A
is linear with frequency. Typical value is measured at 6ns cycle time.
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36
or
= 25ºC; f = 1 MHz
DD
CONDITIONS
DD
Q = 1.5V, and temperature = 25°C.
³
printed circuit board
Q = n x f x V
V
IH
CONDITIONS
;
(x8, x9, x18)
(x8, x9 x18)
SYMBOL
DD
(x8, x9)
(x36)
(x36)
(x18)
(x36)
I
I
DD
Q x (C
I
I
SB1
DD
SB
14
Q
L
+ C
SYMBOL
1.8V V
O
TYP
TBD
TBD
TBD
TBD
).
C
C
C
CK
Micron Technology, Inc., reserves the right to change products or specifications without notice.
O
I
600
800
200
210
142
75
32
71
-4
SYMBOL
DD
q
q
q
TYP
JA
JC
JB
4
6
5
, HSTL, QDRIIb2 SRAM
490
655
170
180
113
75
25
57
-5
MAX
MAX
415
550
150
160
75
21
47
95
-6
TYP
25
10
12
5
7
6
-7.5
340
450
125
135
75
17
38
76
UNITS
UNITS
ºC/W
ºC/W
ºC/W
pF
pF
pF
©2002, Micron Technology Inc.
UNITS NOTES
mA
mA
mA
mA
ADVANCE
O
= 6pF,
NOTES
NOTES
6, 7
6, 8
1, 2, 3
6
6
6
6
2, 4
2
5