K9K1G08U0A Samsung semiconductor, K9K1G08U0A Datasheet - Page 12

• Manufacturer Part Number: K9K1G08U0A
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K1GXXX0A-XCB0
DC AND OPERATING CHARACTERISTICS
NOTE : V
K9K1G08Q0A
K9K1G08U0A
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Operat-
Current
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
ing
Parameter
IL
Parameter
can undershoot to -0.4V and V
Sequential Read
Program
Erase
Symbol
K9K1G16Q0A
K9K1G16U0A
V
Parameter
V
V
K9K1GXXX0A-XCB0
K9K1GXXX0A-XIB0
K9K1GXXX0A-XCB0
K9K1GXXX0A-XIB0
CCQ
CC
SS
SS
Symbol
I
OL
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
OH
LI
IH*
OL
IL*
1
2
IH
1
2
3
can overshoot to V
1.70
1.70
Min
0
CC,
tRC=50ns, CE=V
I
CE=V
CE=V
V
V
I/O pins
Except I/O pins
K9K1GXXQ0A :I
K9K1GXXU0A :I
K9K1GXXQ0A :I
K9K1GXXU0A :I
K9K1GXXQ0A :V
K9K1GXXU0A :V
OUT
IN
OUT
+0.3V which, during transitions, may overshoot to V
K9K1GXXQ0A(1.8V)
=0 to Vcc(max)
=0mA
=0 to Vcc(max)
Test Conditions
IH
CC
:
T
, WP=0V/V
-0.2, WP=0V/V
A
=0 to 70 C, K9K1GXXX0A-XIB0
Typ.
1.8
1.8
0
CC
-
-
-
+0.4V for durations of 20 ns or less
OH
OL
OH
OL
IL
OL
OL
(Recommended operating conditions otherwise noted.)
CC
=2.1mA
=100uA
=100 A
=400 A
=0.4V
=0.1V
Symbol
12
V
V
T
T
CC
IN/OUT
V
Ios
BIAS
CCQ
Max
1.95
1.95
STG
CC
0
V
Vcc
V
CCQ
K9K1GXXQ0A(1.8V)
CC
Min
-0.3
K9K1GXXQ0A(1.8V) K9K1GXXU0A(3.3V)
Q
3
-
-
-
-
-
-
-
-
-0.4
-0.1
-0.4
-0.6 to + 2.45
-0.2 to + 2.45
-0.2 to + 2.45
Min
2.7
2.7
0
Typ
:
10
10
10
20
T
4
-
-
-
-
-
-
-
-
A
K9K1GXXU0A(3.3V)
=-40 to 85 C)
CC
+2.0V for periods <20ns.
V
+0.3
+0.3
Max
V
100
-10 to +125
-40 to +125
-65 to +150
0.4
0.1
20
20
20
CCQ
20
20
1
CC
-
-
Rating
Typ.
3.3
3.3
FLASH MEMORY
0
5
Min
-0.3
2.0
2.0
2.4
K9K1GXXU0A(3.3V)
8
-
-
-
-
-
-
-
-
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to + 4.6
Typ
15
15
15
20
10
-
-
-
-
-
-
-
-
Preliminary
Max
3.6
3.6
0
V
V
CCQ
CC
Max
100
0.8
0.4
30
30
30
1
20
20
-
-
+0.3
+0.3
Unit
Unit
V
V
V
mA
V
Unit
C
C
mA
mA
V
A