K9K1G08U0A Samsung semiconductor, K9K1G08U0A Datasheet - Page 33

• Manufacturer Part Number: K9K1G08U0A
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Figure 13. Program & Read Status Operation
Figure 12. Sequential Row Read2 Operation
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte or consecutive bytes
up to 528, in a single page program cycle. The number of consecutive partial page programming operation within the same page with-
out an intervening erase operation must not exceed 1 for main array and 2 for spare array. The addressing may be done in any ran-
dom order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be loaded
into the page register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.
Serial data loading can be started from 2nd half array by moving pointer. About the pointer operation, please refer to the attached
technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address input and
then serial data loading. The bytes other than those to be programmed do not need to be loaded.The Page Program confirm com-
mand(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the pro-
gramming process. The internal write state control automatically executes the algorithms and timings necessary for program and
verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command
may be entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle
by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are
valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 13).
The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in
Read Status command mode until another valid command is written to the command register.
K9K1G08Q0A
K9K1G08U0A
R/B
I/O
R/B
I/O
0
0
~
~
7
7
50h
80h
(A
Don t Care)
K9K1G16Q0A
K9K1G16U0A
Start Add.(4Cycle)
A
4
0
~ A
~ A
A
Address & Data Input
0
7
528 Byte Data
3
~ A
:
& A
7
9
& A
~ A
9
26
~ A
26
t
R
10h
Data Field
Data Output
1st
33
t
PROG
Spare Field
t
R
1st
Nth
Data Output
Block
(16Byte)
70h
2nd
FLASH MEMORY
t
R
Preliminary
I/O
Fail
0
Data Output
(16Byte)
Nth
Pass