K9K1G08U0A Samsung semiconductor, K9K1G08U0A Datasheet - Page 32

• Manufacturer Part Number: K9K1G08U0A
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Figure 10. Read2 Operation
Figure 11. Sequential Row Read1 Operation
K9K1G08Q0A
K9K1G08U0A
RE
R/B
I/O
CLE
CE
WE
ALE
R/B
I/O
0
0
~
~
7
7
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
00h
01h
(A
Don t Care)
50h
Block
4
~ A
K9K1G16Q0A
K9K1G16U0A
A
7
Start Add.(4Cycle)
:
0
~ A
A
7
Start Add.(4Cycle)
0
1st half array
& A
~ A
9
3
( 00h Command)
~ A
& A
Data Field
26
9
~ A
26
2nd half array
t
R
1st half array
Spare Field
Data Field
Data Output
t
R
1st
1st
2nd
Nth
2nd half array
32
Spare Field
t
R
1st half array
Data Output
( 01h Command)
(528 Byte)
Data Field
Data Output(Sequential)
2nd
Spare Field
2nd half array
FLASH MEMORY
Spare Field
t
R
Preliminary
1st
2nd
Nth
Data Output
(528 Byte)
Nth