K9K1G08U0A Samsung semiconductor, K9K1G08U0A Datasheet - Page 2

• Manufacturer Part Number: K9K1G08U0A
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
PRODUCT LIST
FEATURES
GENERAL DESCRIPTION
The K9K1G08U0A is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides
the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typically 200 s on
the 528-byte(x8 device) or 264-word(x16 device) page and an erase operation can be performed in typically 2ms on a 16K-byte(x8
device) or 8K-word(x16 device) block. Data in the data register can be read out at 50ns(1.8V device : 60ns) cycle time per byte(X8
device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-
chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and mar-
gining of data. Even the write-intensive systems can take advantage of the K9K1G08U0A s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1G08U0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
K9K1G08Q0A
K9K1G08U0A
- Serial Page Access : 50ns(Min.)*
- Memory Cell Array
- Data Register
- Page Program
- Block Erase :
- Page Size
- Random Access
Voltage Supply
Organization
Automatic Program and Erase
Page Read Operation
* K9F12XXQ0A : 60ns(Min.)
- 1.8V device(K9K1GXXQ0A) : 1.70~1.95V
- 3.3V device(K9K1GXXU0A) : 2.7 ~ 3.6 V
- X8 device(K9K1G08X0A) : (128M + 4096K)bit x 8 bit
- X16 device(K9K1G16X0A) : (64M + 2048K)bit x 16bit
- X8 device(K9K1G08X0A) : (512 + 16)bit x 8bit
- X16 device(K9K1G16X0A) : (256 + 8)bit x16bit
- X8 device(K9K1G08X0A) : (512 + 16)Byte
- X16 device(K9K1G16X0A) : (256 + 8)Word
- X8 device(K9K1G08X0A) : (16K + 512)Byte
- X16 device(K9K1G16X0A) : ( 8K + 256)Word
- X8 device(K9K1G08X0A) : (512 + 16)Byte
- X16 device(K9K1G16X0A) : (256 + 8)Word
K9K1G08Q0A-G,J
K9K1G16Q0A-G,J
K9K1G08U0A-Y,P
K9K1G08U0A-G,J
K9K1G08U0A-V,F
K9K1G16U0A-Y,P
K9K1G16U0A-G,J
Part Number
: 12 s(Max.)
K9K1G16Q0A
K9K1G16U0A
1.70 ~ 1.95V
Vcc Range
2.7 ~ 3.6V
2
- Program time : 200 s(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance
- Data Retention : 10 Years
- K9K1GXXU0A-YCB0/YIB0
- K9K1GXXX0A-GCB0/GIB0
- K9K1G08U0A-VCB0/VIB0
- K9K1GXXU0A-PCB0/PIB0
- K9K1GXXX0A-JCB0/JIB0
- K9K1G08U0A-FCB0/FIB0
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
63- Ball FBGA
48 - Pin WSOP I (12X17X0.7mm)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
63- Ball FBGA - Pb-free Package
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9K1G08U0A-V,F(WSOPI ) is the same device as
K9K1G08U0A-Y,P(TSOP1) except package type.
Organization
X16
X16
X8
X8
: 100K Program/Erase Cycles
FLASH MEMORY
PKG Type
Preliminary
WSOP1
TSOP1
TSOP1
FBGA
FBGA
FBGA