K9K1G08U0A Samsung semiconductor, K9K1G08U0A Datasheet - Page 40
K9K1G08U0A
Manufacturer Part Number
K9K1G08U0A
Description
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
1.K9K1G08U0A.pdf
(43 pages)
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Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code*, Reserved(A5h), Multi plane operation
code(C0h) respectively. A5h must be don’ t-cared. C0h means that device supports Multi Plane operation. The command register
remains in Read ID mode until further commands are issued to it. Figure 23 shows the operation sequence.
Figure 23. Read ID Operation 1
K9K1G08Q0A
K9K1G08U0A
CLE
CE
WE
ALE
RE
I/O
0
~
7
90h
K9K1G16Q0A
K9K1G16U0A
Address. 1cycle
00h
t
WHR
t
AR
t
CEA
t
REA
40
Maker code
ECh
K9K1G08Q0A
K9K1G08U0A
K9K1G16Q0A
K9K1G16U0A
Device*
Device
Code
FLASH MEMORY
A5h
Device Code
Preliminary
XX72h
XX74h
78h
79h
Multi-Plane code
C0h