K9K1G08U0A Samsung semiconductor, K9K1G08U0A Datasheet - Page 43

• Manufacturer Part Number: K9K1G08U0A
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

WP
WE
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
circuit gets ready for any command sequences as shown in Figure 26. The two step command sequence for program/erase provides
additional software protection.
Figure 26. AC Waveforms for Power Transition
V
K9K1G08Q0A
K9K1G08U0A
CC
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
K9K1G16Q0A
K9K1G16U0A
IL
during power-up and power-down and recovery time of minimum 10 s is required before internal
10 s
High
43
FLASH MEMORY
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
Preliminary