LPC1112FHN33/202 NXP Semiconductors, LPC1112FHN33/202 Datasheet - Page 79

• Manufacturer Part Number: LPC1112FHN33/202
• Description: ARM Microcontrollers - MCU CortexM0 32bit 16KB
• Manufacturer: NXP Semiconductors

Specifications of LPC1112FHN33/202

• Rohs: yes
• Core: ARM Cortex M0
• Data Bus Width: 32 bit

NXP Semiconductors
10. Dynamic characteristics
LPC111X
Product data sheet
10.1 Power-up ramp conditions
10.2 Flash memory
Table 18.
T
[1]
[2]
Table 19.
T
[1]
[2]
Symbol Parameter
t
Symbol
N
t
t
t
t
V
r
wait
ret
er
prog
amb
amb
Fig 39. Power-up ramp
I
endu
See
The wait time specifies the time the power supply must be at levels below 400 mV before ramping up.
Number of program/erase cycles.
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
= 40 C to +85 C.
= 40 C to +85 C, unless otherwise specified.
Figure
Condition: 0 < V
rise time
wait time
input voltage
Power-up characteristics
Flash characteristics
Parameter
endurance
retention time
erase time
programming
time
39.
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 20 February 2013
I
 400 mV at start of power-up (t = t
400 mV
Conditions
at t = t
at t = t
V
DD
0
Conditions
powered
unpowered
sector or multiple
consecutive
sectors
1
1
: 0 < V
on pin V
I
 400 mV
DD
LPC1110/11/12/13/14/15
t = t
1
32-bit ARM Cortex-M0 microcontroller
[1]
[2]
1
)
Min
10000
10
20
95
0.95
t
wait
[1][2]
t
r
[1]
002aag001
Min
0
12
0
Typ
100000
-
-
100
1
Typ
-
-
-
© NXP B.V. 2013. All rights reserved.
Max
500
-
400
Max
-
-
-
105
1.05
79 of 114
Unit
ms
s
mV
Unit
cycles
years
years
ms
ms