MK60DN512VMC10 Freescale Semiconductor, MK60DN512VMC10 Datasheet - Page 36

• Manufacturer Part Number: MK60DN512VMC10
• Description: ARM Microcontrollers - MCU Kinetis 2.x 512K
• Manufacturer: Freescale Semiconductor

Specifications of MK60DN512VMC10

• Rohs: yes
• Core: ARM Cortex M4
• Processor Series: MK60DN512
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 100 MHz
• Program Memory Size: 512 KB
• Data Ram Size: 128 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 1.71 V to 3.6 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: MAPBGA-121
• Mounting Style: SMD/SMT
• A/d Bit Size: 16 bit
• A/d Channels Available: 2
• Interface Type: CAN, I2C, I2S, SPI, UART, USB
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 40 C
• Number Of Timers: 2
• On-chip Dac: Yes
• Program Memory Type: Flash
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 1.71 V

Peripheral operating requirements and behaviors
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the flash
memory module to obtain an effective endurance increase for the EEPROM data. The
built-in EEPROM record management system raises the number of program/erase cycles
that can be attained prior to device wear-out by cycling the EEPROM data through a
larger EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
where
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• Writes_subsystem — minimum number of writes to each FlexRAM location for
• EEPROM — allocated FlexNVM for each EEPROM subsystem based on DEPART;
• EEESPLIT — FlexRAM split factor for subsystem; entered with the Program
• EEESIZE — allocated FlexRAM based on DEPART; entered with the Program
• Write_efficiency —
• n
subsystem (each subsystem can have different endurance)
entered with the Program Partition command
Partition command
Partition command
cycles)
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• 0.25 for 8-bit writes to FlexRAM
• 0.50 for 16-bit or 32-bit writes to FlexRAM
— data flash cycling endurance (the following graph assumes 10,000
EEPROM – 2 × EEESPLIT × EEESIZE
K60 Sub-Family Data Sheet, Rev. 2, 12/2012.
EEESPLIT × EEESIZE
× Write_efficiency × n
Freescale Semiconductor, Inc.
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