MCIMX503EVM8B Freescale Semiconductor, MCIMX503EVM8B Datasheet - Page 36

• Manufacturer Part Number: MCIMX503EVM8B
• Description: Processors - Application Specialized Codex Rev 1.1
• Manufacturer: Freescale Semiconductor
• Type: Multimedia Applicationsr

Specifications of MCIMX503EVM8B

• Rohs: yes
• Core: ARM Cortex A8
• Processor Series: i.MX50
• Data Bus Width: 32 bit
• Operating Supply Voltage: 0.75 V to 1.275 V
• Mounting Style: SMD/SMT
• Package / Case: MAPBGA-400
• Memory Type: L1/L2 Cache, ROM, SRAM

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2
Electrical Characteristics
4.4
This section defines the I/O impedance parameters of the i.MX50 processor.
36
Pull-up resistor (22 KΩ PU)
Pull-up resistor (47 KΩ PU)
Pull-up resistor (100 KΩ PU)
Pull-down resistor (100 KΩ PD)
Input current (no pull-up/down)
Input current (22 KΩ PU)
Input current (47 KΩ PU)
Input current (100 KΩ PU)
Input current (100 KΩ PD)
High-level output current, high voltage
mode
External pull-up / pull-down
resistor required to overdrive
internal keeper
To maintain a valid level, the transitioning edge of the input must sustain a constant slew rate (monotonic) from the current DC
level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s. VIL and VIH do not apply
when hysteresis is enabled.
Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.
DC Electrical Characteristics
Output Buffer Impedance Characteristics
i.MX50 Applications Processors for Consumer Products, Rev. 4
Table 22. HVIO DC Electrical Characteristics (continued)
Symbol
Ioh_hv
Rext
Rpu
Rpu
Rpu
Rpd
IIN
IIN
IIN
IIN
IIN
Test Conditions
Vol=0.8*OVDD
Medium Drive
Vi=OVDD/2
Vi=OVDD/2
Vi=OVDD/2
Vi=OVDD/2
High Drive
VI=OVDD
VI=OVDD
VI=OVDD
VI=OVDD
VI=OVDD
Low Drive
VI = 0
VI = 0
VI = 0
VI = 0
VI = 0
—
-10.2
-15.3
MIN
-5.1
22
43
46
53
—
—
—
—
—
—
TYP
2.8
29
59
62
77
—
—
—
—
—
—
Freescale Semiconductor
MAX
0.05
0.05
0.05
0.47
148
156
256
470
153
2.5
71
50
77
73
63
—
Units
mA
KΩ
KΩ
KΩ
KΩ
KΩ
nA
μA
μA
μA
μA