SST49LF016C-33-4C-WHE Microchip Technology, SST49LF016C-33-4C-WHE Datasheet - Page 16

IC FLASH SER LPC 16MBIT 32TSOP

SST49LF016C-33-4C-WHE

Manufacturer Part Number
SST49LF016C-33-4C-WHE
Description
IC FLASH SER LPC 16MBIT 32TSOP
Manufacturer
Microchip Technology

Specifications of SST49LF016C-33-4C-WHE

Memory Type
FLASH
Memory Size
16M (2M x 8)
Operating Temperature
0°C ~ 85°C
Package / Case
32-TSOP
Format - Memory
FLASH
Speed
33MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Data Bus Width
8 bit
Architecture
Sectored
Interface Type
Parallel, Serial
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
18 mA
Mounting Style
SMD/SMT
Organization
4 KB x 512
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST49LF016C-33-4C-WHE
Manufacturer:
Microchip Technology
Quantity:
135
Data Sheet
Sector-/Block-Erase Command
The Erase Command operates on one sector or block at a
time. This command requires an (arbitrary) address within
the sector or block to be erased. Note that a Sector/Block
Erase operation changes all Sector/Block byte data to FFh.
If a Read operation is performed after issuing the erase
command, the device will automatically output Status Reg-
ister data. The system can poll the Status Register in order
to verify the completion of the Sector/Block Erase operation
(please refer to Table 10, Status Register Definition). If a
Sector/Block Erase is attempted on a locked block, the
operation will fail and the data in the Sector/Block will not be
changed. In this case, the Status Register will report the
error (BPS=1).
Program Command
The Program command operates on multiple bytes (Refer
to Table 5). This command specifies the address and data
to be programmed. During the Program operation the
device automatically outputs the Status Register data when
read. The system can poll the Status Register in order to
verify the completion of the Program operation (refer to
Table 10, “Software Status Register”). If a Program opera-
tion is attempted on a locked block, the operation will fail
and the data in the addressed byte will not be changed. In
this case, the Status Register will report the error (BPS=1).
Program-/Erase-Suspend or
Program-/Erase-Resume Operations
The Program-Suspend and Erase-Suspend operations
share the same software command sequence (B0H). The
Program-Resume and Erase-Resume operations share
the same software command sequence (D0H). See Table
8, “Software Command Sequence” on page 14.
©2008 Silicon Storage Technology, Inc.
16
Erase-Suspend/
Erase-Resume Commands
The Erase Suspend command allows Sector-Erase or
Block-Erase interruption in order to read or program data
in another block of memory. Once the Erase-Suspend
command is executed, the device will suspend any on-
going Erase operation within time T
outputs status register data when read after the Erase-
Suspend command is written. The system is able to deter-
mine when the Erase operation has been completed
(WSMS=1) by polling the status register. After an Erase-
Suspend, the device will set the status register ESS bit
(ESS=1) if the Erase has been successfully suspended
(refer to Table 10, “Software Status Register”). The Erase-
Resume command resumes the Erase operation that had
been previously suspended.
After a successful Erase-Suspend, a Read-Array com-
mand may be written to read data from a Sector/Block
other than the suspended Sector/Block. A Program com-
mand sequence may also be issued during Erase Sus-
pend to program data in memory locations other than the
Sector/Block currently in the Erase-Suspend mode. If a
Read-Array command is written to an address within the
suspended Sector/Block this may result in reading invalid
data. If a Program command is written to an address within
the suspended Sector/Block the command is acknowl-
edged but rejected. Other valid commands while erase is
suspended include Read-Status-Register, Read-Device-
ID, and Erase-Resume.
The Erase-Resume command resumes the Erase process
in the suspended sector or block. After the Erase-Resume
command is written, the device will continue the Erase pro-
cess. Erase cannot resume until any Program operation ini-
tiated during Erase-Suspend has completed. Suspended
operations cannot be nested: the system needs to com-
plete or resume any previously suspended operation
before a new operation can be suspended. See Figure 8
for flowchart.
16 Mbit LPC Serial Flash
ES
SST49LF016C
(10 µs). The device
S71237-08-000
5/08

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