MT46V32M4TG-6T:D TR Micron Technology Inc, MT46V32M4TG-6T:D TR Datasheet - Page 72

• Manufacturer Part Number: MT46V32M4TG-6T:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M4TG-6T:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (32Mx4)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1024-2

Figure 36:
Figure 37:
09005aef8074a655
128MBDDRx4x8x16_2.fm - Rev. J 4/05 EN
b. The variation in driver pull-down current within nominal limits of voltage and temperature is expected, but
d. The variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not
b. The variation in driver pull-down current within nominal limits of voltage and temperature is expected, but
d. The variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not
e. The full variation in the ratio of the maximum to minimum pull-up and pull-down current should be
c. The full variation in driver pull-up current from minimum to maximum process, temperature and voltage
c. The full variation in driver pull-up current from minimum to maximum process, temperature and voltage
a. The full variation in driver pull-down current from minimum to maximum process, temperature and volt-
not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure 36.
will lie within the outer bounding lines of the V-I curve of Figure 37.
guaranteed, to lie within the inner bounding lines of the V-I curve of Figure 37.
between 0.71 and 1.4, for device drain-to-source voltages from 0.1V to 1.0V, and at the same voltage and tem-
perature. f) The full variation in the ratio of the nominal pull-up to pull-down current should be unity ±10
percent, for device drain-to-source voltages from 0.1V to 1.0V.
not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure 38.
will lie within the outer bounding lines of the V-I curve of Figure 39.
guaranteed, to lie within the inner bounding lines of the V-I curve of Figure 39.
age will lie within the outer bounding lines of the V-I curve of Figure 38.
Full Drive Pull-Down Characteristics
Full Drive Pull-Up Characteristics
6. Reduced Output Drive Curves:
160
140
120
100
-100
-120
-140
-160
-180
-200
80
60
40
20
-20
-40
-60
-80
0
0
0.0
0.0
0.5
0.5
1.0
1.0
V
DD
V
Q - V
OUT
72
(V)
OUT
(V )
1.5
1.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2.0
2.0
128Mb: x4, x8, x16 DDR SDRAM
2.5
2.5
©2000 Micron Technology, Inc. All rights reserved.
Notes