HYB18T1G160BF-5 Qimonda, HYB18T1G160BF-5 Datasheet - Page 40
HYB18T1G160BF-5
Manufacturer Part Number
HYB18T1G160BF-5
Description
IC DDR2 SDRAM 1GBIT 84TFBGA
Manufacturer
Qimonda
Datasheet
1.HYB18T1G800BF-3S.pdf
(74 pages)
Specifications of HYB18T1G160BF-5
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (64M x 16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 95°C
Package / Case
84-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
675-1018-2
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5.6
This chapter contains overshoot and undershoot specification.
Rev. 1.3, 2007-07
03062006-ZNH8-HURV
Parameter
Maximum peak amplitude allowed for overshoot area
Maximum peak amplitude allowed for undershoot area
Maximum overshoot area above
Maximum undershoot area below
Overshoot and Undershoot Specification
V
V
DD
SS
AC Overshoot / Undershoot Specification for Address and Control Pins
AC Overshoot / Undershoot Diagram for Address and Control Pins
DDR2-400
0.9
0.9
1.33
1.33
40
DDR2-533
0.9
0.9
1.00
1.00
1-Gbit Double-Data-Rate-Two SDRAM
HY[B/I]18T1G[40/80/16]0B[C/F](L/V)
DDR2-667
0.9
0.9
0.80
0.80
Internet Data Sheet
DDR2-800
0.9
0.9
0.66
0.66
TABLE 44
FIGURE 6
Unit
V
V
V.ns
V.ns
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