VS-GB50YF120N Vishay Semiconductors, VS-GB50YF120N Datasheet - Page 2

• Manufacturer Part Number: VS-GB50YF120N
• Description: IGBT Modules 1200 Volt 50 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB50YF120N

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 66 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Factory Pack Quantity: 6

Note
(1)
Revision: 21-Mar-13
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Threshold voltage temperature coefficient
Zero gate voltage collector current
Diode forward voltage drop
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode peak reverse recovery current
Diode reverse recovery time
Total reverse recovery charge
Energy losses include “tail” and diode reverse recovery
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
V
J
= 25 °C unless otherwise specified)
SYMBOL
SYMBOL
RBSOA
SCSOA
BV
V
= 25 °C unless otherwise noted)
GE(th)
V
t
t
CE(ON)
Q
I
V
I
Q
E
E
GE(th)
Q
E
E
E
E
d(on)
d(off)
CES
GES
Q
I
t
(CES)
t
FM
t
GE
GC
on
off
tot
on
off
tot
rr
rr
r
G
f
rr
/T
J
I
V
V
I
V
T
I
V
T
I
V
T
T
R
T
V
R
T
T
T
T
T
T
V
I
I
I
I
V
V
V
V
I
I
I
I
V
C
C
C
C
C
C
C
C
F
F
F
F
J
J
J
J
J
J
J
J
J
J
J
CC
GE
GE
GE
GE
CC
GE
CE
CE
GE
GE
GE
G
G
= 50 A
= 75 A
= 50 A, T
= 75 A, T
= 50 A
= 50 A, V
= 50 A, V
= 50 A, V
= 50 A, V
= 75 A, V
= 50 A, V
= 75 A, V
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 150 °C, I
= 150 °C
= 10 , V
= 10 , V
2
= 15 V
= 15 V, R
= 15 V, R
= 15 V, R
= 0 V, I
= V
= V
= 0 V, V
= 0 V, V
= ± 20 V
= 600 V
= 900 V, V
GE
GE
TEST CONDITIONS
TEST CONDITIONS
, I
, I
(1)
J
J
C
GE
GE
GE
GE
CC
CC
CC
C
C
CE
CE
(1)
= 125 °C
= 125 °C
GE
GE
= 500 μA
C
= 250 μA
= 1 mA (25 °C to 125 °C)
G
G
G
= 15 V
= 15 V
= 15 V, T
= 15 V, T
= 600 V
= 600 V
= 600 V
P
= 1200 V
= 1200 V, T
= 4.7 , L = 500 μH
= 4.7 , L = 500 μH
= 4.7 , L = 500 μH
= 150 A
= 15 V to 0 V
= 15 V to 0 V
= 1200 V
V
I
dI/dt = 7 A/μs
F
www.vishay.com/doc?91000
CC
= 50 A
J
J
= 600 V
= 125 °C
= 125 °C
J
= 125 °C
Vishay Semiconductors
[e-mail]
1200
MIN.
MIN.
4.0
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GB50YF120N
Fullsquare
Document Number: 93653
0.453
TYP.
TYP.
3.49
4.15
4.16
4.97
3.30
3.90
4.37
- 10
600
0.93
1.20
2.13
1.68
1.77
3.46
0.74
0.12
4.9
3.6
400
187
128
292
134
1.3
2.0
0.4
11
43
56
-
-
-
MAX.
± 200
MAX.
1000
0.49
0.82
250
3.9
4.5
4.5
5.4
6.0
4.5
5.0
4.8
5.5
2.3
0.3
1.5
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
mV/°C
UNITS
μA
nA
nC
mJ
μC
ns
μs
μs
V
V
A