VS-GB50YF120N Vishay Semiconductors, VS-GB50YF120N Datasheet - Page 3

• Manufacturer Part Number: VS-GB50YF120N
• Description: IGBT Modules 1200 Volt 50 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB50YF120N

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 66 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Factory Pack Quantity: 6

Revision: 21-Mar-13
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case IGBT
Junction to case DIODE
Case to sink, flat, greased surface
Mounting torque (M5)
Weight
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
Fig. 2 - Power Dissipation vs. Case Temperature
160
140
120
100
350
300
250
200
150
100
80
60
40
20
50
Fig. 1 - Maximum DC Collector Current vs.
0
0
0
0
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20
10
Case Temperature
40
20
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
60
30
T
I
C
C
80
(A)
(°C)
40
100 120 140 160
50
60
R
R
thCS
R
thJC
SYMBOL
thJC
70
(MODULE)
(DIODE)
(IGBT)
3
MIN.
2.7
-
-
-
-
1000
0.01
100
1000
0.1
10
100
1
10
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1
1
10
TYP.
0.05
170
-
-
-
Fig. 4 - Reverse Bias SOA
T
T
C
J
Fig. 3 - Forward SOA
10
= 150 °C; V
= 25 °C; T
Vishay Semiconductors
100
V
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V
CE
100
CE
J
(V)
GE
MAX.
 150 °C
(V)
0.38
1.00
3.3
-
-
= 15 V
GB50YF120N
Document Number: 93653
1000
1000
10000
10000
UNITS
°C/W
Nm
g