VS-GB50YF120N Vishay Semiconductors, VS-GB50YF120N Datasheet - Page 6

• Manufacturer Part Number: VS-GB50YF120N
• Description: IGBT Modules 1200 Volt 50 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB50YF120N

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 66 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Factory Pack Quantity: 6

Revision: 21-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
1600
1400
1200
1000
800
600
400
200
0
0
Fig. 17 - Typical Diode Q
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1E-005
0.0001
0.001
0.001
0.01
20
V
0.01
0.1
0.1
CC
1
10
1E-006
1E-006
1
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 600 V; I
dI
D = 0.50
40
D = 0.50
F/
dt (A/µs)
Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (DIODE)
125°C
0.20
0.10
Fig. 19 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
0.02
F
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.01
60
= 50 A
0.20
0.05
25°C
rr
vs. dI
0.10
80
0.05
0.02
0.01
F
/dt
0.0001
100
1E-005
t
1
, Rectangular Pulse Duration (s)
SINGLE PULSE
( THERMAL RESPONSE )
t
1
, Rectangular Pulse Duration (s)
0.001
6
0.01
0.0001
16
14
12
10
8
6
4
2
0
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0.1
0
Fig. 18 - Typical Gate Charge vs. V
100
I
CE
Q
G
Vishay Semiconductors
= 5.0 A; L = 600 μH
, Total Gate Charge (nC)
1
200
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300
0.001
GB50YF120N
10
Document Number: 93653
typical value
400
GE
500