VS-GB50YF120N Vishay Semiconductors, VS-GB50YF120N Datasheet - Page 4

• Manufacturer Part Number: VS-GB50YF120N
• Description: IGBT Modules 1200 Volt 50 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB50YF120N

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 66 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Factory Pack Quantity: 6

Revision: 21-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
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120
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80
60
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80
60
40
20
Fig. 7 - Typical Diode Forward Characteristics
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60
40
20
0
0
Fig. 5 - Typical IGBT Output Characteristics
Fig. 6 - Typical IGBT Output Characteristics
0
0.0
0
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
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1
1.0
1
25°C
125°C
T
T
J
J
2
= 125 °C; t
= 25 °C; t
2.0
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2
t
p
3
= 500 μs
3.0
V
V
3
V
CE
CE
F
4
p
(V)
p
(V)
(V)
= 500 μs
4.0
= 500 μs
4
5
5.0
5
6
6.0
6
7
7.0
8
7
4
300
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50
20
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12
10
0
8
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4
2
0
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6
4
2
0
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Fig. 10 - Typical Transfer Characteristics
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7
7
Fig. 8 - Typical V
Fig. 9 - Typical V
9
9
V
6
CE
Vishay Semiconductors
= 20 V; t
11
11
T
T J = 25°C
T J = 125°C
T
J
J
8
= 125 °C
V
V
V
= 25 °C
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GE
GE
GE
13
13
p
(V)
(V)
(V)
= 500 μs
CE
CE
10
GB50YF120N
vs. V
vs. V
15
15
Document Number: 93653
I CE = 75A
I CE = 50A
I CE = 25A
I CE = 75A
I CE = 50A
I CE = 25A
GE
GE
12
17
17
14
19
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