VS-GB50YF120N Vishay Semiconductors, VS-GB50YF120N Datasheet - Page 5

• Manufacturer Part Number: VS-GB50YF120N
• Description: IGBT Modules 1200 Volt 50 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB50YF120N

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 66 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Factory Pack Quantity: 6

Revision: 21-Mar-13
T
J
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
= 125 °C; L = 200 μH; V
Fig. 11 - Typical Zero Gate Voltage Collector Current
For technical questions within your region: [e-mail], [e-mail],
0.001
0.01
5.5
4.5
3.5
2.5
0.1
4.5
3.5
2.5
1.5
0.5
5
4
3
2
1
4
3
2
1
400
0
0
Fig. 13 - Typical Energy Loss vs. I
Fig. 12 - Typical Threshold Voltage
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T J = 25°C
0.2
20
T J = 125°C
600
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.4
40
CE
V
I
C
CES
I
C
T J = 25°C
800
(mA)
= 600 V, R
(A)
T J = 125°C
(V)
0.6
60
E ON
1000
G
0.8
= 5 ; V
80
E OFF
C
1200
100
GE
1
= 15 V
5
T
J
= 125 °C; L = 200 μH; V
0.01
800
700
600
500
400
300
200
100
12
10
0.1
8
6
4
2
0
0
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1
0
0
Fig. 14 - Typical Switching Time vs. I
0
Fig. 15 - Typical Diode I
Fig. 16 - Typical Diode t
20
20
20
V
V
CC
CC
Vishay Semiconductors
= 600 V; I
= 600 V; I
t F
dI
dI
40
40
40
CE
F/
F/
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I
dt (A/µs)
C
= 600 V, R
dt (A/µs)
(A)
125°C
125°C
F
F
60
60
= 50 A
= 50 A
25°C
60
GB50YF120N
REC
rr
Document Number: 93653
vs. dI
25°C
vs. dI
G
80
= 5 ; V
80
80
td OFF
t R
F
td ON
F
/dt
/dt
C
100
100
100
GE
= 15 V