VS-GB50YF120N Vishay Semiconductors, VS-GB50YF120N Datasheet - Page 9

• Manufacturer Part Number: VS-GB50YF120N
• Description: IGBT Modules 1200 Volt 50 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB50YF120N

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 66 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Factory Pack Quantity: 6

Document Number: 95252
Revision: 29-Nov-07
0.8 ± 0.03
13.2 ± 0.15
1.25
5.5 ± 0.05
- 0.02
- 0.06
Detail
in millimeters (inches)
X 2:1
0.8
R 3
For technical questions, contact:
Z Y
4443
2
4140
4 5 6 7 8
39.49
34.29
83
30.48
30.48
ECONO2 4PAK
22.86
22.86
- 0.2
0
19.05
19.05
38 373635
15.24
11.43 11.43
11.43
107.8 ± 0.2
105 ± 0.1
93 ± 0.15
7.62 7.62
7.62 7.62
10
3.81
0.6
19.05
19.05
12
33 32 30 29282726
22.86
22.86
26.67
26.67
30.48
Z 2:1
34.29
34.29
39.49
[e-mail]
15 16 17 19
0.5
0.8 ± 0.03
1.25
Outline Dimensions
Vishay Semiconductors
- 0.02
- 0.06
1
20.5
Y 2:1
+ 1.0
- 0.5
0.85
www.vishay.com
7.5
- 0 3
0
1