IKP08N65F5XKSA1 Infineon Technologies, IKP08N65F5XKSA1 Datasheet - Page 11

• Manufacturer Part Number: IKP08N65F5XKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKP08N65F5XKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 18 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKP08N65F5 SP000973408

0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
Figure 13. Typicalswitchingenergylossesasa
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
Figure 15. Typicalswitchingenergylossesasa
200
5
V
CE
functionofgateresistor
(inductiveload,T
V
Figure E)
functionofcollectoremittervoltage
(inductiveload,T
I
E)
15
C
,COLLECTOR-EMITTERVOLTAGE[V]
GE
=4A,r
E
E
E
E
E
E
250
off
on
ts
off
on
ts
=15/0V,I
25
r
G
G
=48 ,DynamictestcircuitinFigure
,GATERESISTOR[ ]
300
35
C
=4A,Dynamictestcircuitin
vj
vj
350
=150°C,V
=150°C,V
45
55
400
CE
GE
65
=400V,
=15/0V,
Highspeedswitchingseriesfifthgeneration
450
75
500
85
11
Figure 14. Typicalswitchingenergylossesasa
Figure 16. Typicalgatecharge
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
16
14
12
10
8
6
4
2
0
0.0
25
functionofjunctiontemperature
(inductiveload,V
I
E)
(I
C
T
C
=4A,r
E
E
E
130V
520V
vj
=8A)
50
off
on
ts
,JUNCTIONTEMPERATURE[°C]
5.0
Q
G
GE
=48 ,DynamictestcircuitinFigure
,GATECHARGE[nC]
75
10.0
CE
100
=400V,V
15.0
IKP08N65F5
125
Rev.1.1,2012-11-09
GE
=15/0V,
20.0
150
25.0
175