IKP08N65F5XKSA1 Infineon Technologies, IKP08N65F5XKSA1 Datasheet - Page 12

• Manufacturer Part Number: IKP08N65F5XKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKP08N65F5XKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 18 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKP08N65F5 SP000973408

Figure 17. Typicalcapacitanceasafunctionof
0.001
Figure 19. Diodetransientthermalimpedanceasa
1000
0.01
100
0.1
10
1
1
1E-7
0
V
CE
collector-emittervoltage
(V
functionofpulsewidth
(D=t
1E-6
,COLLECTOR-EMITTERVOLTAGE[V]
C
C
C
GE
5
iss
oss
rss
=0V,f=1MHz)
p
/T)
1E-5
t
i:
r
p
i
[K/W]:
i
[s]:
,PULSEWIDTH[s]
10
1E-4
1
0.4457406
1.9E-5
15
0.001
2
0.911159
2.4E-4
20
3
0.9864113
2.3E-3
0.01
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Highspeedswitchingseriesfifthgeneration
25
4
0.5566891
0.02112308
0.1
30
1
12
Figure 18. IGBTtransientthermalresistance
Figure 20. Typicalreverserecoverytimeasafunction
0.01
0.1
70
65
60
55
50
45
40
35
30
25
20
1
1E-6
600 700 800 900 1000 1100 1200 1300 1400 1500 1600
di
(D=t
ofdiodecurrentslope
(V
F
1E-5
R
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
p
/T)
i:
r
t
i
[K/W]:
i
[s]:
1E-4
p
,PULSEWIDTH[s]
T
T
j
j
=25°C, I
=150°C, I
1
0.3389743
2.2E-5
0.001
F
F
2
0.8017237
3.2E-4
= 4A
= 4A
IKP08N65F5
0.01
Rev.1.1,2012-11-09
3
0.7055106
3.0E-3
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
4
0.3537915
0.02235159
1