IKP08N65F5XKSA1 Infineon Technologies, IKP08N65F5XKSA1 Datasheet - Page 9

• Manufacturer Part Number: IKP08N65F5XKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKP08N65F5XKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 18 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKP08N65F5 SP000973408

Figure 5. Typicaloutputcharacteristic
Figure 7. Typicalcollector-emittersaturationvoltageas
2.00
1.75
1.50
1.25
1.00
0.75
24
21
18
15
12
9
6
3
0
0.0
0
V
V
GE
(T
afunctionofjunctiontemperature
(V
CE
=20V
0.5
vj
18V
12V
10V
,COLLECTOR-EMITTERVOLTAGE[V]
T
GE
25
=150°C)
8V
7V
6V
5V
I
I
I
vj
C
C
C
=15V)
,JUNCTIONTEMPERATURE[°C]
=2A
=4A
=8A
1.0
50
1.5
75
2.0
100
2.5
125
3.0
Highspeedswitchingseriesfifthgeneration
150
3.5
175
4.0
9
Figure 6. Typicaltransfercharacteristic
Figure 8. Typicalswitchingtimesasafunctionof
100
24
21
18
15
12
10
9
6
3
0
1
4
0
(V
collectorcurrent
(inductiveload,T
V
Figure E)
GE
CE
3
V
T
T
t
t
t
t
=15/0V,r
d(off)
f
d(on)
r
GE
=20V)
j
j
=25°C
=150°C
I
C
5
,GATE-EMITTERVOLTAGE[V]
,COLLECTORCURRENT[A]
6
G
=48 ,Dynamictestcircuitin
9
6
vj
=150°C,V
12
7
15
IKP08N65F5
Rev.1.1,2012-11-09
CE
=400V,
18
8
21
24
9