IKP08N65F5XKSA1 Infineon Technologies, IKP08N65F5XKSA1 Datasheet - Page 13

• Manufacturer Part Number: IKP08N65F5XKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKP08N65F5XKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 18 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKP08N65F5 SP000973408

Figure 21. Typicalreverserecoverychargeasa
Figure 23. Typicaldiodepeakrateoffallofreverse
-100
-150
-200
-250
-300
-350
-400
0.35
0.30
0.25
0.20
0.15
0.10
-50
0
600 700 800 900 1000 1100 1200 1300 1400 1500 1600
600 700 800 900 1000 1100 1200 1300 1400 1500 1600
di
di
functionofdiodecurrentslope
(V
recoverycurrentasafunctionofdiode
currentslope
(V
F
F
T
T
T
T
R
R
/dt,DIODECURRENTSLOPE[A/µs]
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
=400V)
j
j
j
j
=25°C, I
=150°C, I
=25°C, I
=150°C, I
F
F
F
F
= 4A
= 4A
= 4A
= 4A
Highspeedswitchingseriesfifthgeneration
13
Figure 22. Typicalreverserecoverycurrentasa
Figure 24. Typicaldiodeforwardcurrentasafunction
14
13
12
11
10
27
24
21
18
15
12
9
8
7
6
5
4
9
6
3
0
600 700 800 900 1000 1100 1200 1300 1400 1500 1600
0.0
di
functionofdiodecurrentslope
(V
offorwardvoltage
F
T
T
T
T
R
/dt,DIODECURRENTSLOPE[A/µs]
0.5
=400V)
j
j
j
j
=25°C, I
=150°C, I
=25°C
=150°C
V
F
,FORWARDVOLTAGE[V]
1.0
F
F
= 4A
= 4A
1.5
IKP08N65F5
2.0
Rev.1.1,2012-11-09
2.5
3.0