IKP08N65F5XKSA1 Infineon Technologies, IKP08N65F5XKSA1 Datasheet - Page 14

• Manufacturer Part Number: IKP08N65F5XKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKP08N65F5XKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 18 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKP08N65F5 SP000973408

Figure 25. Typicaldiodeforwardvoltageasafunction
2.0
1.8
1.6
1.4
1.2
1.0
0.8
25
ofjunctiontemperature
T
vj
50
,JUNCTIONTEMPERATURE[°C]
75
100
125
I
I
I
F
F
F
=4,5A
=9A
=18A
Highspeedswitchingseriesfifthgeneration
150
175
14
IKP08N65F5
Rev.1.1,2012-11-09