IKP08N65F5XKSA1 Infineon Technologies, IKP08N65F5XKSA1 Datasheet - Page 5

• Manufacturer Part Number: IKP08N65F5XKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKP08N65F5XKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 18 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKP08N65F5 SP000973408

ElectricalCharacteristic,atT
StaticCharacteristic
ElectricalCharacteristic,atT
DynamicCharacteristic
SwitchingCharacteristic,InductiveLoad,atT
IGBTCharacteristic
Parameter
Collector-emitter breakdown voltage V
Collector-emitter saturation voltage V
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
vj
vj
=25°C,unlessotherwisespecified
=25°C,unlessotherwisespecified
Symbol Conditions
V
V
I
I
g
Symbol Conditions
C
C
C
Q
L
Symbol Conditions
t
t
t
t
E
E
E
CES
GES
d(on)
r
d(off)
f
fs
E
(BR)CES
CEsat
F
GE(th)
on
off
ts
ies
oes
res
G
Highspeedswitchingseriesfifthgeneration
V
V
T
T
T
V
T
T
T
I
V
T
T
V
V
V
V
V
T
V
V
r
C =30pF
L ,C fromFig.E
Energy losses include “tail” and
diode reverse recovery.
C
G
vj
vj
vj
vj
vj
vj
vj
vj
vj
GE
GE
GE
CE
CE
CE
CE
CC
GE
CC
GE
=0.08mA,V
vj
=48.0 ,L =30nH,
=25°C
=125°C
=175°C
=25°C
=125°C
=175°C
=25°C
=175°C
=25°C,
=25°C
=0V,I
=15.0V,I
=0V,I
=650V,V
=0V,V
=20V,I
=25V,V
=520V,I
=15V
=400V,I
=0.0/15.0V,
5
C
F
=9.0A
GE
=0.20mA
C
GE
=8.0A
C
C
=20V
C
GE
=8.0A,
=4.0A,
CE
=0V,f=1MHz
=8.0A
=0V
=V
GE
min.
min.
min.
650
3.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKP08N65F5
Value
Value
Value
1.60
1.80
1.90
1.45
1.40
1.40
17.0
22.0
0.07
0.02
0.09
typ.
typ.
typ.
500
116
Rev.1.1,2012-11-09
4.0
7.0
16
10
20
3
5
-
-
-
-
4000.0
max.
max.
max.
2.10
1.80
40.0
100
4.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
Unit
µA
nC
nH
mJ
mJ
mJ
nA
pF
ns
ns
ns
ns
V
V
V
V
S