SPP16N50C3XKSA1 Infineon Technologies, SPP16N50C3XKSA1 Datasheet

no-image

SPP16N50C3XKSA1

Manufacturer Part Number
SPP16N50C3XKSA1
Description
MOSFET
Manufacturer
Infineon Technologies
Datasheet

Specifications of SPP16N50C3XKSA1

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
560 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
16 A
Resistance Drain-source Rds (on)
0.28 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Fall Time
8 ns
Forward Transconductance Gfs (max / Min)
14 S
Gate Charge Qg
66 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
160 W
Rise Time
8 ns
Typical Turn-off Delay Time
50 ns
Part # Aliases
SP000681056 SPP16N50C3HKSA1
Rev. 3.2
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
SPP16N50C3
SPI16N50C3
SPA16N50C3
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
Reverse diode dv/dt
D
D
C
C
=8, V
=16A, V
= 25 °C
= 100 °C
DD
DD
=50V
=50V
T
PG-TO220FP
Package
PG-TO220
PG-TO262
C
6)
= 25°C
p
limited by T
AR
AR
limited by T
limited by T
jmax
Ordering Code
Q67040-S4583
Q67040-S4582
SP000216351
p age 1
jmax
j ma x
2)
PG-TO220FP
P-TO220-3-31
dv/dt
Symbol
I
I
E
E
I
V
V
P
T
D
D puls
AR
j ,
AS
AR
GS
GS
tot
Marking
16N50C3
16N50C3
16N50C3
T
stg
SPI16N50C3, SPA16N50C3
1
2
3
V
PG-TO262
SPP_I
DS
R
0.64
460
±20
± 30
160
DS(on)
16
10
48
16
@ T
I
D
-55...+150
Value
jmax
15
SPP16N50C3
P-TO220-3-1
SPA
0.64
16
10
PG-TO220
460
±20
± 30
2009-12-22
2
48
16
34
0.28
560
16
1)
1)
Unit
A
A
mJ
A
V
W
°C
V/ns
V
A
1
2 3

Related parts for SPP16N50C3XKSA1

SPP16N50C3XKSA1 Summary of contents

Page 1

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 ...

Page 2

Maximum Ratings Parameter Drain Source voltage slope = 400 125 ° Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ...

Page 3

Electrical Characteristics Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source ...

Page 4

Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol ...

Page 5

Power dissipation tot C SPP16N50C3 170 W 140 120 100 Safe operating area parameter : ...

Page 6

Transient thermal impedance thJC p parameter K Typ. output ...

Page 7

Typ. drain-source on resistance R =f(I ) DS(on) D parameter: T =150° 4.5V 5V Ω 1.2 0.8 0 Typ. transfer characteristics ≥ ...

Page 8

Forward characteristics of body diode parameter µ SPP16N50C3 °C typ 150 °C ...

Page 9

Avalanche power losses parameter: E =0.64mJ AR 450 W 350 300 250 200 150 100 Typ. C stored energy oss E =f(V ) oss DS ...

Page 10

Definition of diodes switching characteristics Rev. 3.2 SPI16N50C3, SPA16N50C3 p age 10 SPP16N50C3 2009-12-22 ...

Page 11

PG-TO220-3-1, PG-TO220-3-21 Rev. 3.2 SPI16N50C3, SPA16N50C3 p age 11 SPP16N50C3 2009-12-22 ...

Page 12

PG-TO220-3 (Fully isolated) Dimensions in mm/ inches Rev. 3.2 SPP16N50C3 SPI16N50C3, SPA16N50C3 24 page 12 2009-12-20 ...

Page 13

PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 3.2 SPI16N50C3, SPA16N50C3 p age 13 SPP16N50C3 2009-12-22 ...

Page 14

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

Related keywords