SPP16N50C3XKSA1 Infineon Technologies, SPP16N50C3XKSA1 Datasheet - Page 8

• Manufacturer Part Number: SPP16N50C3XKSA1
• Description: MOSFET
• Manufacturer: Infineon Technologies

Specifications of SPP16N50C3XKSA1

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.28 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 8 ns
• Forward Transconductance Gfs (max / Min): 14 S
• Gate Charge Qg: 66 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 160 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 50 ns
• Part # Aliases: SP000681056 SPP16N50C3HKSA1

Rev. 3.2
13 Forward characteristics of body diode
I
parameter: T j , t
15 Avalanche energy
E
par.: I
F
AS
= f (V
mJ
10
10
10
10
= f (T
0.5
0.3
0.2
0.1
A
-1
D
0
2
1
0
20
0
SPP16N50C3
= 8 , V
SD
j
)
)
0.4
40
DD
0.8
p
60
= 10 µs
= 50 V
1.2
T
T
T
T
80
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
100
2
120
2.4
°C
V
V
T
SD
j
160
p age 8
3
14 Avalanche SOA
I
par.: T
16 Drain-source breakdown voltage
V
AR
(BR)DSS
= f (t
600
570
560
550
540
530
520
510
500
490
480
470
460
450
A
V
16
12
10
8
6
4
2
0
-60
10
j
≤ 150 °C
SPP16N50C3
AR
-3
= f (T
T j(start) = 125°C
SPI16N50C3, SPA16N50C3
)
10
-20
-2
j
)
10
20
-1
10
0
60
10
T j(start) = 25°C
SPP16N50C3
1
100
10
2009-12-22
2
°C
T
t
µs
AR
j
180
10
4