SPP16N50C3XKSA1 Infineon Technologies, SPP16N50C3XKSA1 Datasheet - Page 7

• Manufacturer Part Number: SPP16N50C3XKSA1
• Description: MOSFET
• Manufacturer: Infineon Technologies

Specifications of SPP16N50C3XKSA1

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.28 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 8 ns
• Forward Transconductance Gfs (max / Min): 14 S
• Gate Charge Qg: 66 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 160 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 50 ns
• Part # Aliases: SP000681056 SPP16N50C3HKSA1

Rev. 3.2
9 Typ. drain-source on resistance
R
parameter: T
11 Typ. transfer characteristics
I
parameter: t
D
DS(on)
= f ( V
Ω
1.2
0.8
0.4
A
60
50
45
40
35
30
25
20
15
10
2
0
5
0
0
0
=f(I
GS
4V
1
D
); V
)
p
5
j
=150°C, V
4.5V
2
= 10 µs
DS
3
≥ 2 x I
10
4
5V
GS
15
D
5
Tj = 25°C
x R
6
6V
DS(on)max
20
7
Tj = 150°C
8
A
8V
20V
V
V
I
D
GS
p age 7
30
10
10 Drain-source on-state resistance
R
parameter : I
12 Typ. gate charge
V
parameter: I
GS
DS(on)
Ω
1.6
1.2
0.8
0.6
0.4
0.2
= f (Q
V
16
12
10
1
0
8
6
4
2
0
-60
0
SPP16N50C3
SPP16N50C3
= f (T
10
SPI16N50C3, SPA16N50C3
Gate
-20
D
D
20
j
)
= 16 A pulsed
= 10 A, V
)
30
20
98%
40
0,2
typ
V
60
50
GS
DS max
60
SPP16N50C3
= 10 V
100
0,8 V
70
2009-12-22
DS max
80
°C
nC
T
Q
j
Gate
180
100