SPP16N50C3XKSA1 Infineon Technologies, SPP16N50C3XKSA1 Datasheet - Page 5

• Manufacturer Part Number: SPP16N50C3XKSA1
• Description: MOSFET
• Manufacturer: Infineon Technologies

Specifications of SPP16N50C3XKSA1

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.28 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 8 ns
• Forward Transconductance Gfs (max / Min): 14 S
• Gate Charge Qg: 66 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 160 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 50 ns
• Part # Aliases: SP000681056 SPP16N50C3HKSA1

Rev. 3.2
1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
= f (T
10
10
10
170
140
120
100
W
A
80
60
40
20
-1
-2
0
2
1
0
10
0
SPP16N50C3
0
DS
C
20
)
)
40
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
60
1
C
=25°C
80
100
10
120
2
°C
V
T
V
C
DS
160
p age 5
10
3
2 Power dissipation FullPAK
P
4 Safe operating area FullPAK
I
parameter: D = 0, T
D
tot
= f (V
10
10
= f (T
10
10
10
W
A
36
28
24
20
16
12
-1
-2
8
4
0
2
1
0
10
0
DS
0
C
SPI16N50C3, SPA16N50C3
20
)
)
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
40
10
60
C
1
= 25°C
80
SPP16N50C3
100
10
2009-12-22
120
2
°C
V
T
V
C
DS
160
10
3