SPP16N50C3XKSA1 Infineon Technologies, SPP16N50C3XKSA1 Datasheet - Page 6

• Manufacturer Part Number: SPP16N50C3XKSA1
• Description: MOSFET
• Manufacturer: Infineon Technologies

Specifications of SPP16N50C3XKSA1

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.28 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 8 ns
• Forward Transconductance Gfs (max / Min): 14 S
• Gate Charge Qg: 66 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 160 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 50 ns
• Part # Aliases: SP000681056 SPP16N50C3HKSA1

Rev. 3.2
5 Transient thermal impedance
Z
parameter: D = t
7 Typ. output characteristic
I
parameter: t
D
thJC
K/W
= f (V
10
10
10
10
10
10
A
60
40
30
20
10
= f (t
-1
-2
-3
-4
0
1
0
10
0
DS
-7
p
); T
)
10
p
= 10 µs, V
5
-6
j
=25°C
p
/T
10
-5
10
10
GS
-4
20V
7V
6.5V
15
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
-3
V
4.5V
5.5V
5V
6V
s
t
V
p
DS
p age 6
10
25
-1
6 Transient thermal impedance FullPAK
Z
parameter: D = t
8 Typ. output characteristic
I
parameter: t
D
thJC
K/W
= f (V
10
10
10
10
10
10
A
35
25
20
15
10
= f (t
-1
-2
-3
-4
5
0
1
0
10
0
DS
-7
SPI16N50C3, SPA16N50C3
p
); T
10
)
p
-6
= 10 µs, V
5
j
10
=150°C
p
-5
/t
10
10
-4
10
GS
-3
15
SPP16N50C3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
20V
7V
6V
10
-2
2009-12-22
10
V
-1
4.5V
5V
4V
t
V
p
s
DS
10
25
1