SPP16N50C3XKSA1 Infineon Technologies, SPP16N50C3XKSA1 Datasheet - Page 4

• Manufacturer Part Number: SPP16N50C3XKSA1
• Description: MOSFET
• Manufacturer: Infineon Technologies

Specifications of SPP16N50C3XKSA1

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.28 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 8 ns
• Forward Transconductance Gfs (max / Min): 14 S
• Gate Charge Qg: 66 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 160 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 50 ns
• Part # Aliases: SP000681056 SPP16N50C3HKSA1

Rev. 3.2
Electrical Characteristics
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
SPP_I
0.012
0.023
0.043
0.149
0.069
0.17
P
tot
(t)
Value
T
j
C
0.012
0.023
0.043
0.176
0.371
2.522
SPA
th1
R
th1
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
p age 4
T
V
V
di
T
C
j
GS
R
F
=25°C
C
=25°C
=380V, I
/dt=100A/µs
R
Symbol
C
C
C
C
C
C
Conditions
th,n
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
=I
T
T
=I
case
am b
S
S
,
0.0002495
0.0009406
SPI16N50C3, SPA16N50C3
0.001298
0.009484
0.00362
SPP_I
E xternal H eatsink
0.077
min.
-
-
-
-
-
-
-
Value
Values
0.0002495
0.0009406
1100
0.001298
0.008025
typ.
420
0.00362
40
1
7
-
-
0.412
SPP16N50C3
SPA
2009-12-22
max.
1.2
16
48
-
-
-
-
Unit
Ws/K
Unit
A
V
ns
µC
A
A/µs